A1190 데이터 시트보기 (PDF) - Renesas Electronics

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A1190

Silicon PNP Epitaxial

Renesas Electronics 

2SA1190

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current trnsfer ratio

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE*1

2SA1190

Min Typ Max

–90

—

—

–90

—

—

–5

—

—

—

— –0.1

—

— –0.1

250

—

800

Collector to emitter saturation voltage

VCE(sat)

— –0.05 –0.15

Base to emitter saturation voltage

Gain bandwidth product

VBE(sat)

fT

—

–0.7 –1.0

—

130

—

Collector output capacitance

Cob

—

3.2

—

Noise figure

NF

—

0.15

1.5

—

0.2

2.0

Noise voltage referred to input

en

—

0.7

—

Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.

2. Pulse test

D

E

250 to 500 400 to 800

(Ta = 25°C)

Unit

V

V

V

µA

µA

V

V

MHz

pF

dB

dB

nV/

√Hz

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –70 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V,

IC = –2 mA*2

IC = –10 mA,

IB = –1 mA*2

VCE = –6 V,

IC = –10 mA

VCB = –10 V, IE = 0,

f = 1 MHz

VCE = –6 V,

IC = –0.1 mA,

Rg = 10 kΩ

f = 1 kHz

VCE = –6 V,

IC = –0.1 mA,

Rg = 10 kΩ

f = 10 Hz

VCB = –6 V,

IC = –10 mA,

Rg = 0, f = 1 kHz

Rev.2.00 Aug 10, 2005 page 2 of 6

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