2SA1203 데이터 시트보기 (PDF) - Transys Electronics Limited

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2SA1203

SOT-89 Plastic-Encapsulate Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-89 Plastic-Encapsulate Transistors

2SA1203 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.5 W (Tamb=25℃)

Collector current

ICM : -1.5 A

Collector-base voltage

V(BR)CBO : -30 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

VBE

fT

Cob

Test conditions

Ic=-1mA, IE=0

Ic=-10mA, IB=0

IE=-1mA, IC=0

VCB=-30V, IE=0

VEB=-5V, IC=0

VCE=-2V, IC=-500mA

IC=-1.5A, IB=-30mA

VCE=-2V, IC=-500mA

VCE=-2V, IC=-500mA

VCB=-10V, IE=0, f=1MHz

MIN TYP MAX UNIT

-30

V

-30

V

-5

V

-0.1 µA

-0.1 µA

100

320

-2

V

-1

V

120

MHz

50 pF

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

O

100-200

HO1

Y

160-320

HY1

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