2P4MP16 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2P4MP16 Datasheet PDF : 7 Pages
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2P4M,2P6M
<R> MAXIMUM RATINGS
CHARACTERISTICS
SYMBOL
Non-repetitive Peak Reverse Voltage Note
Non-repetitive Peak Off-state Voltage Note
Repetitive Peak Reverse Voltage Note
Repetitive Peak Off-state Voltage Note
VRSM
VDSM
VRRM
VDRM
2P4M
500
500
400
400
2P6M
700
700
600
600
On-state Current
IT(AV)
2 (TC = 77°C, θ = 180°, Single phase half wave)
Effective On-state Current
IT(RMS)
4
Surge Non-repetitive On-state Current
Fusing Current
ITSM
∫ iT2dt
20 (f = 50 Hz, sin half wave, 1 cycle)
1.6 (1 ms ≤ t ≤ 10 ms)
Critical Rate Rise of On-state Current
dIT/dt
50
Peak Gate Power Dissipation
PGM
0.5 (f ≥ 50 Hz, Duty ≤ 10%)
Average Gate Power Dissipation
PG(AV)
0.1
Peak Gate Forward Current
IFGM
0.2 (f ≥ 50 Hz, Duty ≤ 10%)
Peak Gate Reverse Voltage
VRGM
6
Junction Temperature
Tj
−40 to +125
Storage Temperature
Tstg
−55 to +150
Note TC: Case Temperature is measured at 1.5 mm from the neck of Tablet.
UNIT
REMARK
V
V
V
V
A
A
A
A2s
A/μs
W
W
A
V
°C
°C
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
RGK = 1 kΩ
See Fig. 3, Fig. 4
−
See Fig. 10
−
−
−
−
−
−
−
−
<R> ELECTRICAL CHARACTERISTICS (TA = 25°C, RGK = 1 kΩ)
CHARACTERISTICS
Repetitive Peak Reverse Current Note
Repetitive Peak Off-state Current Note
Critical Rate Rise of Off-state Voltage
On-state Voltage
Gate-trigger Current Note
SYMBOL
TEST CONDITIONS
IRRM VRM = VRRM,
Tj = 25°C
Tj = 125°C
IDRM
VDM = VDRM,
Tj = 25°C
Tj = 125°C
dVD/dt Tj = 125°C, VDM = 2/3 VDRM
VTM ITM = 4 A
IGT VDM = 6 V, RL = 100 Ω,
MIN.
−
−
−
−
10
−
−
−
Gate-trigger Voltage Note
VGT VDM = 6 V, RL = 100 Ω,
−
Gate Non-trigger Voltage Note
VGD VDM = 1/2 VDRM, Tj = 125°C,
0.2
TYP.
−
−
−
−
−
10
−
−
−
−
MAX.
10
100
10
100
−
−
2.2
200
0.8
−
UNIT REMARK
μA
μA
V/μs
−
−
−
−
2P4M
2P6M
V See Fig. 1
μA See Fig. 5,
Fig. 7
V See Fig. 6,
Fig. 8
V
−
Holding Current Note
IH VDM = 24 V, ITM = 4 A
−
1
3
mA See Fig. 9
Circuit Commuted Turn-off Time
tq
Tj = 125°C, ITM = 500 mA,
−
30
−
μs
−
diR/dt = 15 A/μs, VR ≥ 25 V,
VDM = 2/3 VDRM, dVD/dt = 10 V/μs
Thermal Resistance
Rth(j-c) Junction to case DC
−
−
10 °C/W See Fig. 11
Rth(j-a) Junction to ambient DC
−
−
75
Note Insert a resistance less than 1 kΩ between gate and cathode, because the items indicated are guaranteed by
connecting short resistance between gate and cathode (RGK = 1 kΩ).
2
Data Sheet D13531EJ5V0DS
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