2N7002BKT 데이터 시트보기 (PDF) - NXP Semiconductors.
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2N7002BKT Datasheet PDF : 16 Pages
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NXP Semiconductors
2N7002BKT
60 V, 290 mA N-channel Trench MOSFET
10
ID
(A)
1
10−1
10−2
Limit RDSon = VDS/ID
017aaa049
(1)
(2)
(3)
(4)
(5)
(6)
10−3
10−1
1
10
102
VDS (V)
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] -
420 480 K/W
[2] -
340 395 K/W
-
-
150 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002BKT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 15 June 2010
© NXP B.V. 2010. All rights reserved.
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