2N6790 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

일치하는 목록

2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET

Fairchild Semiconductor 

Data Sheet

December 2001

2N6790

3.5A, 200V, 0.800 Ohm, N-Channel Power

MOSFET

The 2N6790 is an N-Channel enhancement mode silicon

gate power MOS field effect transistor designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. This device can be operated directly

from an integrated circuit.

Ordering Information

PART NUMBER

PACKAGE

BRAND

2N6790

TO-205AF

2N6790

NOTE: When ordering, include the entire part number.

Features

• 3.5A, 200V

• rDS(ON) = 0.800Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

Packaging

JEDEC TO-205AF

G

S

DRAIN

(CASE)

SOURCE

GATE

©2001 Fairchild Semiconductor Corporation

2N6790 Rev. B

Share Link: