2N6049 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6049 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6049
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA
VCEsat-2 Collector-emitter saturation voltage IC=-4A; IB=-0.8A
VBE
Base -emitter on voltage
ICEX
Collector cut-off current
ICEO
Collector cut-off current
IC=-0.5A ; VCE=-4V
VCE=-90V;VBE(off)=-1.5V
TC=150℃
VCE=-30V; IB=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-4V
hFE-2
DC current gain
IC=-3A ; VCE=-4V
COB
Output capacitance
fT
Transition frequency
IE=0 ; VCB=-10V,f=0.1MHz
IC=-0.2A ; VCE=-10V;f=1MHz
MIN TYP. MAX UNIT
-55
V
-0.5
V
-2.0
V
-1.0
V
-1.0
-6.0
mA
-0.5
mA
-1.0
mA
25
100
6
200
pF
3.0
2
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