2N5613 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N5613

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2N5613 2N5615 2N5617 2N5619

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

2N5613

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5615/5617

IC=-50mA ;IB=0

2N5619

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

VBE

Base-emitter on voltage

IC=-2.5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=Rated VCBO; IE=0

ICEO

Collector cut-off current

VCE= Rated VCEO,IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

2N5613/5617

hFE

DC current gain

IC=-2.5A ; VCE=-5V

2N5615/5619

fT

Transition

frequency

2N5613/5617

2N5615/5619

IC=-0.5A ; VCE=-10V

MIN TYP. MAX UNIT

-60

-80

V

-100

-0.5

V

-1.5

V

-0.1 mA

-1.0 mA

-0.1 mA

70

200

30

90

70

MHz

60

2

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