2N5057 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N5057 Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, Una.
2N5057
PNP SILICON SWITCHING TRANSISTOR
JEDEC TO-18 CASE
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col lector Current
Power Dissipation
Power D i s s i p a t i o n (Tr;=25
Operating and Storage
Junction Temperature
VCBO
15
V
UCEO
15
V
VEBO
4.5
V
«C
200
mA
0.5
W
1.2
w
TJ.
-65 TO +200
ELEC__TRICAL CHARACTERI 5TIC5 (TA-25°C unless otherwise noted)
SYMBOL
ICES
'CES
BVCBO
B^CEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hep
cob
Cib
t0ff
is
TEST CONDITIONS
VCE=10V
o
VCE=10V, TA=125 C
lc=10uA
lc=10uA
lc=10mA
|E=100uA
lc=10,i>A, IB=1 .OmA
lc=30mA, 1 g=3 . OmA
lc= 100mA, !B=10niA
lc=10inA, IB=1 .OmA
lc-30mA, lg=3.0niA
lc= 100mA, 1B= 1 OmA
lc=1 .OmA
VcE«o!3V,' IC=10mA
VCE=0.5V, lc=30mA
Vrc-I.OV, |r= 100mA
VQE=10V, lc=30mA, f=100MHz
VCB=5-OV, lE-0
VEB=0.5V, lc=0
VCC=3.0V, lc=30mA, lB]=3.0mA
VCC=3-OV, lc=30mA, 181 = I 82=3-OmA
Vrjc=3-OV, lrj=10mA, iBH'Ba^'OmA
2N5056
MIN MAX
50
10
15
15
15
0. 13
0. 19
0.92
1. 15
1.5
J2
20
30
100
20
600
6.0
20
35
30
2N5057
MIN MAX UNIT
50
nA
10
15
V
15
V
15
V
4. 5
V
0.13 V
0.19
V
0.45 V
0.92 V
1.15 V
1.5
V
20
30
40 100
30
800
MHz
4.5 pF
6.0 pr-
20
os
35
ns
30
ns
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of goina to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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