2N5010(Rev1) 데이터 시트보기 (PDF) - Microsemi Corporation
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2N5010 Datasheet PDF : 3 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Base-Emitter Saturation Voltage
IC = 25mA
IC = 20mA
IB = 5mA, Pulsed
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
Collector-Emitter Saturation Voltage
IC = 25mA
IC = 25mA
IC = 25mA
IC = 20mA
IC = 20mA
IC = 20mA
IB = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
Symbol
VBE(SAT)
VCE(SAT)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of small signal short-circuit forward current transfer ratio
VCE = 10Vdc, IC = 25mA, f = 10MHz
VCE = 10Vdc, IC = 20mA, f = 10MHz
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
Symbol
|hfe|
Open circuit output capacitance
VCB = 10V, IE = 0, f = 2MHz
Cobo
Min.
Min.
1.0
1.0
Max.
Unit
1.0
Vdc
1.0
Vdc
1.4
Vdc
1.5
Vdc
1.6
Vdc
1.6
Vdc
1.6
Vdc
1.8
Vdc
Max.
Unit
30
pF
T4-LDS-0067 Rev. 1 (082021)
Page 3 of 3
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