2N3906V 데이터 시트보기 (PDF) - KEC
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2N3906V Datasheet PDF : 4 Pages
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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: ICEX=50nA(Max.), IBL=50nA(Max.)
@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.
Low Collector Output Capacitance
: Cob=4pF(Max.) @VCB=5V.
Complementary to 2N3906V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IB
PC *
Tj
Tstg
RATING
60
40
6
200
50
100
150
-55 150
UNIT
V
V
V
mA
mA
mW
2N3904V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2 +_0.05
B
0.8 +_0.05
1
3
C
0.5 +_ 0.05
D
0.3 +_ 0.05
E
1.2 +_ 0.05
G
0.8 +_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2 +_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
Type Name
ZC
2003. 12. 12
Revision No : 0
1/4
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