2N3997 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N3997 Datasheet PDF : 2 Pages
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2N3997
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10 µA
100
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50 mA
80
Volts
Collector-Emitter Cutoff Current
ICEO VCE = 60 Volts
10
µA
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICES1
ICES1
IEBO1
IEBO2
VCE = 80 Volts
VCE = 80 Volts, TA = 150°C
VEB = 5 Volts
VEB = 8 Volts
200
nA
50
µA
200
nA
10
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Parameter
Delay Time
Rise Time
Storage Time
Fall Time
Saturated Turn-On Time
Saturated Turn-Off Time
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
hFE1
hFE2
hFE3
hFE4
VBEsat1
VBEsat2
VCEsat1
VCEsat2
Test Conditions
IC = 50 mA, VCE = 2 Volts
IC = 1 A, VCE = 2 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 2 Volts
TA = -55°C
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
Min
Typ
Max Units
60
80
240
20
20
0.6
1.2
Volts
1.6
0.25
Volts
2
Symbol
|hFE|
COBO
Test Conditions
VCE = 5 Volts, IC = 1 A,
f = 10 MHz
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max Units
3
12
150
pF
Symbol
td
tr
ts
tf
tON
tOFF
Test Conditions
Min
Typ
Max Units
100
ns
240
ns
1.75
µs
300
ns
300
ns
2.0
µs
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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