2N3866UB 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N3866UB Datasheet PDF : 2 Pages
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2N3866UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Base Breakdown Voltage
V(BR)CBO IC = 100 µA
60
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5 mA
30
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 100 µA
3.5
Volts
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
ICEO
ICES1
ICES2
VCE = 28 Volts
VCE = 55 Volts
VCE = 55 Volts, TA = 150°C
20
µA
100
µA
2
mA
On Characteristics
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 50 mA, VCE = 5 Volts
15
hFE2 IC = 360 mA, VCE = 5 Volts
5
hFE3 IC = 50 mA, VCE = 5 Volts
7
TA = -55°C
VCEsat1 IC = 100 mA, IB = 10 mA
200
1
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 15 Volts, IC = 50 mA,
f = 200 MHz
2.5
Open Circuit Output Capacitance
COBO VCB = 28 Volts, IE = 0 mA,
8
3.5
pF
Collector Efficiency
Power Output
VCC = 28 Volts, f = 400 MHz
η1
Pin = 0.15 W
45
η2
Pin = 0.075 W
40
VCC = 28 Volts, f = 400 MHz
P1out Pin = 0.15 W
1.0
P1out Pin = 0.075 W
0.5
%
2
Watts
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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