2N3810LJ 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N3810LJ Datasheet PDF : 3 Pages
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Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3810LJ)
• JANTX level (2N3810LJX)
• JANTXV level (2N3810LJV)
• JANS level (2N3810LJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PT
TJ
TSTG
2N3810L
Silicon PNP Transistor
Data Sheet
Applications
• General purpose
• Matched Dual transistors
• PNP silicon transistor
Features
• Hermetically sealed TO-78 metal can
• Also available in chip configuration
• Chip geometry 0220
• Reference document:
MIL-PRF-19500/336
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
TC = 25°C unless otherwise specified
Rating
Unit
60
Volts
60
Volts
5
Volts
50
mA
300 one section
600 both sections
1.71one section
3.43 both sections
-65 to +200
mW
mW/°C
°C
-65 to +200
°C
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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