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2N3506ALJ Datasheet PDF : 2 Pages
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2N3506AL
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Base Breakdown Voltage
V(BR)CBO IC = 100 µA
60
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA
40
Volts
Emitter-Base Breakdown Voltage
V(BR)EBO IE = 10 µA
5
Volts
Collector-Emitter Cutoff Current
ICEX1 VCE = 40 Volts, VEB = 4 Volts
1
µA
Collector-Emitter Cutoff Current
ICEX2
VCE = 40 Volts, VEB = 4 Volts,
TA = 150°C
1.5
mA
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 500 mA, VCE = 1 Volts
50
hFE2 IC = 1.5 A, VCE = 2 Volts
40
DC Current Gain
hFE3 IC = 2.5 A, VCE = 3 Volts
30
hFE4 IC = 3.0 A, VCE = 5 Volts
25
hFE5 IC = 500 mA, VCE = 2 Volts
25
TA = -55°C
VBEsat1 IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage
VBEsat2 IC = 1.5 A, IB = 150 mA
VBEsat3 IC = 2.5 A, IB = 250 mA
VCEsat1 IC = 500 mA, IB = 50 mA
Collector-Emitter Saturation Voltage
VCEsat2 IC = 1.5 A, IB = 150 mA
0.8
VCEsat3 IC = 2.5 A, IB = 250 mA
250
200
0.5
1.0
Volts
1.5
1.0
1.3
Volts
2.0
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 5 Volts, IC = 100 mA,
f = 20 MHz
3
15
Open Circuit Output Capacitance
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
40
pF
Open Circuit Input Capacitance
CIBO
VEB = 3 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
300
pF
Delay Time
td
IC = 1.5 A, IB1 = 150 mA
15
ns
Rise Time
tr
IC = 1.5 A, IB1 = 150 mA
30
ns
Switching Characteristics
Storage Time
Fall Time
ts
IC = 1.5 A, IB1=IB2 = 150 mA
tf
IC = 1.5 A, IB1=IB2 = 150 mA
55
ns
35
ns
Copyright 2002
Rev. E
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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