2N2906AUB 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N2906AUB Datasheet PDF : 2 Pages
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2N2906AUB
Silicon PNP Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA
60
Volts
Collector-Base Cutoff Current
ICBO1 VCB = 60 Volts
10
µA
Collector-Base Cutoff Current
ICBO2 VCB = 50 Volts
10
nA
Collector-Base Cutoff Current
ICBO3 VCB = 50 Volts, TA = 150OC
10
µA
Collector-Emitter Cutoff Current
ICES VCE = 50 Volts
50
nA
Emitter-Base Cutoff Current
IEBO1 VEB = 5 Volts
10
µA
Emitter-Base Cutoff Current
IEBO2 VEB = 4 Volts
50
nA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Saturated Turn-On Time
Saturated Turn-Off Time
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Symbol
Test Conditions
Min
Typ
Max Units
hFE1 IC = 0.1 mA, VCE = 10 Volts
40
hFE2 IC = 1.0 mA, VCE = 10 Volts
40
hFE3 IC = 10 mA, VCE = 10 Volts
40
hFE4 IC = 150 mA, VCE = 10 Volts
40
hFE5 IC = 500 mA, VCE = 10 Volts
40
hFE6 IC = 10 mA, VCE = 10 Volts
20
TA = -55OC
VBEsat1 IC = 150 mA, IB = 15 mA
0.6
VBEsat2 IC = 500 mA, IB = 50 mA
VCEsat1 IC = 150 mA, IB = 15 mA
VCEsat2 IC = 500 mA, IB = 50 mA
175
120
1.3
Volts
2.6
0.4
Volts
1.6
Symbol
Test Conditions
Min
Typ
Max Units
|hFE|
VCE = 20 Volts, IC = 20 mA,
f = 100 MHz
2.0
hFE
VCE = 10 Volts, IC = 1 mA,
f = 1 kHz
40
COBO
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
CIBO
VEB = 0.5 Volts, IC = 0 mA,
100 kHZ < f < 1 MHz
8
pF
30
pF
ton
45
ns
toff
300
ns
Copyright 2002
Rev. K
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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