2N2857UBJ 데이터 시트보기 (PDF) - Semicoa Semiconductor
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2N2857UBJ Datasheet PDF : 2 Pages
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2N2857UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 3 mA
15
Volts
Collector-Base Cutoff Current
ICBO1 VCB = 15 Volts
10
nA
Collector-Base Cutoff Current
ICBO3 VCB = 30 Volts
1
µA
Collector-Base Cutoff Current
ICBO2 VCB = 15 Volts, TA = 150°C
1
µA
Collector-Emitter Cutoff Current
ICES VCE = 16 Volts
100
nA
Emitter-Base Cutoff Current
IEBO1 VEB = 3 Volts
10
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Symbol
hFE1
hFE2
VBEsat
VCEsat
Test Conditions
IC = 3 mA, VCE = 1 Volts
IC = 3 mA, VCE = 1 Volts
TA = -55°C
IC = 10 mA, IB = 1 mA
IC = 10 mA, IB = 1 mA
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Typ
Max Units
30
150
10
1.0
Volts
0.4
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE|
VCE = 6 Volts, IC = 5 mA,
f = 100 MHz
10
Small Signal Short Circuit Forward
Current Transfer Ratio
hFE
VCE = 6 Volts, IC = 2 mA,
f = 1 kHz
50
Collector to Base Feedback
Capacitance
CCB
VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
Collector Base time constant
rb’CC
VCB = 6 Volts, IE = 2 mA,
f = 31.9 MHz
4
Small Signal Power Gain
Gpe
VCE = 6 Volts, IE = 1.5 mA,
f = 450 MHz
12.5
Noise Figure
VCE = 6 Volts, IC = 1.5 mA,
F
f < 450 MHz, Rg = 50 Ω
21
220
1
pF
15
ps
21
MHz
4.5
dB
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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