25F 데이터 시트보기 (PDF) - Vishay Semiconductors

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25F

Standard Recovery Diodes (Stud Version), 25 A

Vishay Semiconductors 

25F(R) Series

Vishay High Power Products Standard Recovery Diodes

(Stud Version), 25 A

25

DC

180°

20

120°

90°

60°

30°

15

RMS Limit

6 K/W

8 K/W

10 K/W

R

thSA = 4 K/W- Delta R

10

5

0

0

Conduction Period

16F(R) Series

TJ = 175°C

15 K/W

20 K/W

30 K/W

5 10 15 20 25

Average Forward Current (A)

300

25

50

75

100

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - Forward Power Loss Characteristics

350

At Any Rated Load Condition And With

Rated VRRM Applied Following Surge.

300

Initial TJ = 175°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

250

200

150

100

25F(R) Series

50

1

10

100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

1000

100

TJ = 25°C

10

TJ = 175°C

25F(R) Series

1

0 0.5 1 1.5 2 2.5 3 3.5 4

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

400

Maximum Non Repetitive Surge Current

350

Versus Pulse Train Duration.

Initial TJ = 175°C

300

No Voltage Reapplied

Rated VRRM Reapplied

250

200

150

100

50 25F(R) Series

0

0.01

0.1

1

10

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

10

Steady State Value

RthJC = 1.5 K/W

(DC Operation)

1

25F(R) Series

0.1

0.001

0.01

0.1

1

10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance ZthJC Characteristics

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4

For technical questions, contact: ind-modules@vishay.com

Document Number: 93506

Revision: 29-Sep-08

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