RFP2N12 데이터 시트보기 (PDF) - Intersil
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RFP2N12 Datasheet PDF : 5 Pages
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Semiconductor
September 1998
RFP2N12,
RFP2N15
2A, 120V and 150V, 1.750 Ohm,
N-Channel Power MOSFETs
[ /Title
(RFP2N
12,
RFP2N1
5)
/Subject
(2A,
120V
and
150V,
1.75
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
220AB)
/Creator
()
/DOCIN
FO pdf-
mark
Features
• 2A, 120V and 150V
• rDS(ON) = 1.750Ω
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP2N12
TO-220AB
RFP2N12
RFP2N15
TO-220AB
RFP2N15
NOTE: When ordering, include the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated cir-
cuits.
Formerly developmental type TA09196.
Symbol
D
G
S
Packaging
JEDEL TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
[ /Page-
Mode
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998
5-1
File Number 2882.1
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