1SV283B 데이터 시트보기 (PDF) - Toshiba
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1SV283B Datasheet PDF : 3 Pages
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV283B
1SV283B
CATV Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 11.5 (typ.)
• Low series resistance: rs = 0.55 Ω (typ.)
• Excellent C-V characteristics and small tracking error
• Suitable for small tuners
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
VR
VRM
Tj
Tstg
34
V
36 (RL = 10 kΩ)
V
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
Symbol
Test Condition
VR
IR
C2 V
C25 V
C2 V/C25 V
C25 V/C28 V
rs
IR = 1 μA
VR = 32 V
VR = 2 V, f = 1 MHz
VR = 25 V, f = 1 MHz
⎯
⎯
VR = 5 V, f = 470 MHz
Note 1: Available in a matched group for capacitance to 2.0%.
C (max) − C (min) <= 0.02
C (min)
(VR = 2~25 V).
Min Typ. Max Unit
34
⎯
⎯
V
⎯
⎯
10
nA
29 31.5 34
pF
2.5 2.75
3
pF
10.6 11.5 ⎯
⎯
1.03 ⎯
⎯
⎯
⎯ 0.55 0.75 Ω
Marking
1
2007-11-01
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