1SV252 데이터 시트보기 (PDF) - Toshiba

부품명

상세내역

일치하는 목록

1SV252

TOSHIBA Diode Silicon Epitaxial Pin Type

Toshiba 

TOSHIBA Diode Silicon Epitaxial Pin Type

1SV252

1SV252

VHF~UHF Band RF Attenuator Applications

Unit: mm

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Reverse voltage

Forward current

Junction temperature

Storage temperature range

VR

50

V

IF

50

mA

Tj

125

°C

Tstg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Reverse voltage

Reverse current

Forward voltage

Total capacitance

Series resistance

VR

IR = 10 μA

IR

VR = 50 V

VF

IF = 50 mA

(Note)

CT

VR = 50 V, f = 1 MHz

rs

IF = 10 mA, f = 100 MHz

Note: CT is measured by 3 terminal method with capacitance bridge.

Marking

JEDEC

―

JEITA

SC-70

TOSHIBA

1-2P1C

Weight: 0.006 g (typ.)

Min Typ. Max Unit

50

⎯

⎯

V

⎯

⎯

0.1

μA

⎯

0.93 0.98

V

⎯

0.2

0.4

pF

⎯

3.5

10

Ω

1

2007-11-01

Share Link: