1SS394 데이터 시트보기 (PDF) - Toshiba

부품명

상세내역

일치하는 목록

1SS394

Silicon Epitaxial Schottky Barrier Type Diode

Toshiba 

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS394

High Speed Switching Application

1SS394

Unit: mm

z Small package

z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

VRM

VR

IFM

15

V

10

V

200

mA

Average forward current

IO

100

mA

Surge current (10ms)

IFSM

1

A

Power dissipation

P

150

mW

Junction temperature

Tj

125

°C

Storage temperature range

Tstg

−55 to 125

°C

Operating temperature range

Topr

−40 to 100

°C

JEDEC

TO-236MOD

Note: Using continuously under heavy loads (e.g. the application of high JEITA

SC-59

temperature/current/voltage and the significant change in

TOSHIBA

1-3G1B

temperature, etc.) may cause this product to decrease in the

Weight: 0.012g (typ.)

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristic

Forward voltage

Reverse current

Total capacitance

Symbol

VF (1)

VF (2)

VF (3)

IR

CT

Test

Circuit

Test Condition

― IF = 1mA

― IF = 5mA

― IF = 100mA

― VR = 10V

― VR = 0, f = 1MHz

Min Typ. Max Unit

― 0.18 ―

―

0.23 0.30

V

― 0.35 0.50

―

―

20 μA

―

20

40

pF

Marking

Start of commercial production

1996-04

1

2014-03-01

Share Link: