1SS336 데이터 시트보기 (PDF) - Toshiba
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1SS336 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS336
Ultra High Speed Switching Application
1SS336
Unit: mm
z Small package
: SC-59
z Low forward voltage
: VF (3) = 0.84V (typ.)
z Fast reverse recovery time : trr = 7ns (typ.)
z Small total capacitance : CT = 7pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
600 *
mA
Average forward current
IO
200 *
mA
Surge current (10ms)
Power dissipation
IFSM
P
6*
A
150
mW
Junction temperature
Storage temperature
Tj
150
°C
JEDEC
Tstg
−55 to 150
°C
JEITA
TD-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA
1-3G1E
temperature/current/voltage and the significant change in
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― IF = 200mA
― VR = 30V
― VR = 80V
― VR = 0, f = 1MHz
― IF = 30mA, Fig.1
Min Typ. Max Unit
― 0.64 ―
― 0.78 ―
V
― 0.84 1.2
―
― 0.25
μA
―
― 0.50
―
7
―
pF
―
7
20
ns
Start of commercial production
1989-11
1
2014-03-01
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