Features
• Single-voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time - 55 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (96K, 128K Bytes)
• Fast Erase Cycle Time - 10 seconds
• Byte-by-byte Programming - 10 µs/Byte Typical
• Hardware Data Protection
• DATA Polling for End of Program Detection
• Low Power Dissipation
– 50 mA Active Current
– 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49F002(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its 2
megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55
ns with power dissipation of just 275 mW over the commercial temperature range.
Pin Configurations
(continued)
DIP Top View
Pin Name
A0 - A17
CE
OE
WE
RESET
I/O0 - I/O7
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
RESET
Data Inputs/Outputs
Don’t Connect
* RESET 1
A16 2
A15 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
GND 16
32 VCC
31 WE
30 A17
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
PLCC Top View
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
A11 1
A9 2
A8 3
A13 4
A14 5
A17 6
WE 7
VCC 8
* RESET 9
A16 10
A15 11
A12 12
A7 13
A6 14
A5 15
A4 16
*Note: This pin is a DC on the AT49F002(N)(T).
32 OE
31 A10
30 CE
29 I/O7
28 I/O6
27 I/O5
26 I/O4
25 I/O3
24 GND
23 I/O2
22 I/O1
21 I/O0
20 A0
19 A1
18 A2
17 A3
2-megabit
(256K x 8)
5-volt Only
Flash Memory
AT49F002
AT49F002N
AT49F002T
AT49F002NT
Not Recommended
for New Design
Contact Atmel to discuss
the latest design in trends
and options
Rev. 1017D–10/99
1