SST31LF021 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST31LF021 Datasheet PDF : 24 Pages
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2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
EOL Data Sheet
TABLE 2: PIN DESCRIPTION
Symbol Pin Name
Functions
AMS1-A0 Address Inputs
To provide memory addresses.
During flash Sector-Erase, A17-A12 address lines will select the sector.
A17-A0 to provide flash address
A16-A0 to provide SST31LF021/021E SRAM
addresses
DQ7-DQ0 Data Input/Output
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a flash Erase/Program cycle.
The outputs are in tri-state when OE# or BES# and BEF# are high.
BES#
SRAM Memory Bank Enable To activate the SRAM memory bank when BES# is low.
BEF#
Flash Memory Bank Enable To activate the Flash memory bank when BEF# is low.
OE#
Output Enable
To gate the data output buffers.
WE#
Write Enable
To control the Write operations.
VDD
Power Supply
VSS
Ground
3.0-3.6V Power Supply
1. AMS = Most significant address
T2.3 1137
TABLE 3: OPERATION MODES SELECTION
Mode
Flash
Read
Program
Erase
BES# BEF# OE#
X1
VIL
VIL
X
VIL
VIH
X
VIL
VIH
WE# A9 DQ
VIH AIN DOUT
VIL AIN DIN
VIL X X
SRAM
Read
Write
Standby
Flash Write Inhibit
Product Identification
Hardware Mode
VIL
VIL
VIHC
X
X
X
X
VIH
VIH
VIHC
X
X
VIH
VIL
VIL
VIH
X
VIL
X
X
VIL
X
X
VIH
X
X
VIL
VIH
Software Mode
X
VIL
VIL
VIH
1. X can be VIL or VIH, but no other value.
2. Device ID 18H for SST31LF021, 19H for SST31LF021E.
AIN DOUT
AIN DIN
X High Z
X High Z / DOUT
X High Z / DOUT
X High Z / DOUT
VH Manufacturer’s ID (BFH)
Device ID2
AIN ID Code
Address
AIN
AIN
Sector address,
XXH for Bank-Erase
AIN
AIN
X
X
X
X
A17-A1=VIL, A0=VIL
A17-A1=VIL, A0=VIH
See Table 4
T3.4 1137
©2007 Silicon Storage Technology, Inc.
7
S71137-06-EOL
05/07
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