1N1614R 데이터 시트보기 (PDF) - Microsemi Corporation

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1N1614R

HIGH RELIABILITY SILICON POWER RECTIFIER

Microsemi Corporation 

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http://www.microsemi.com

HIGH RELIABILITY SILICON POWER RECTIFIER

Qualified per MIL-PRF-19500/162

• Glass Passivated Die

• Glass to Metal Seal Construction

• VRRM 200 to 1000 Volts

DEVICES

1N1614

1N1615

1N1616

1N4458

1N4459

1N1614R

1N1615R

1N1616R

1N4458R

1N4459R

LEVELS

JAN

JANTX

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Peak Repetitive Reverse Voltage

1N1614

1N1615

1N1616

1N4458

1N4459

1N1614R

1N1615R

1N1616R

1N4458R

1N4459R

Average Forward Current, TC = 150°

Peak Surge Forward Current @ tp = 8.3ms, half sinewave,

TC = 150°C

Thermal Resistance, Junction to Case

Operating Case Temperature Range

Storage Temperature Range

Symbol

VRWM

IF

IFSM

RθJC

Tj

TSTG

Value

200

400

600

800

1000

15

100

4.5

-65°C to 175°C

-65°C to 175°C

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Forward Voltage

IFM = 15A, TC = 25°C*

Reverse Current

VRM = 200, TC = 25°C

VRM = 400, TC = 25°C

VRM = 600, TC = 25°C

VRM = 800, TC = 25°C

VRM = 1000, TC = 25°C

Reverse Current

VRM = 200, TC = 150°C

VRM = 400, TC = 150°C

VRM = 600, TC = 150°C

VRM = 800, TC = 150°C

VRM = 1000, TC = 150°C

1N1614

1N1615

1N1616

1N4458

1N4459

1N1614

1N1615

1N1616

1N4458

1N4459

* Pulse test: Pulse width 300 µsec, Duty cycle 2%

Symbol

VFM

1N1614R

1N1615R

1N1616R

IRM

1N4458R

1N4459R

1N1614R

1N1615R

1N1616R

IRM

1N4458R

1N4459R

Min.

Max.

1.5

50

500

Note:

Unit

V

A

A

°C/W

°C

°C

Unit

V

μA

μA

DO-203AA (DO-4)

T4-LDS-0139 Rev. 1 (091749)

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