12N50 데이터 시트보기 (PDF) - Unisonic Technologies
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12N50 Datasheet PDF : 6 Pages
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12N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Current (Note 3)
VGSS
ID
IDM
IAR
±30
V
12 (Note 2)
A
48 (Note 2)
A
12
A
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
EAS
EAR
684
mJ
19.5
mJ
Peak Diode Recovery dv/dt (Note 5)
dv/dt
4.5
V/ns
Power Dissipation
(TC=25°C)
TO-220/ TO-263
TO-220F/TO-220F1
TO-220F2
TO-220/TO-263
PD
195
42
W
43
1.53
Derate above 25°C TO-220F/TO-220F1
0.33
W/°C
TO-220F2
0.34
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =9.5mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/ TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL
θJA
θJC
RATINGS
62.5
0.65
3.0
2.9
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-528.F
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