12N50(2011) 데이터 시트보기 (PDF) - Unisonic Technologies
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12N50 Datasheet PDF : 6 Pages
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12N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=500V, VGS=0V
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
IGSS
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=6A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
VGS=10V, VDS=400V, ID=12A
(Note 1, 2)
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=250V, ID=12A, RG=25Ω
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
Body Diode Reverse Recovery Time
trr
IS=12A, VGS=0V, dIF/dt=100A/µs
Body Diode Reverse Recovery Charge
QRR
(Note 1)
Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
500
V
10 µA
+100 nA
-100 nA
2.0
4.0 V
0.42 0.54 Ω
1450 1930 pF
198 265 pF
14.5 22 pF
30 39 nC
8
nC
12
nC
28 65 ns
54 120 ns
75 160 ns
47 105 ns
12 A
48 A
1.5 V
154
ns
0.45
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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