12N70G-TF2-T(2017) 데이터 시트보기 (PDF) - Unisonic Technologies
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12N70G-TF2-T Datasheet PDF : 8 Pages
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12N70
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
700
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
Gate-Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA,Referenced to 25°C
V
10 μA
±100 nA
0.7
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD = 30V, ID = 0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS= 50V,ID= 1.3A,
VGS= 10 V (Note 1, 2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 12A
Maximum Continuous Drain-Source Diode
Forward Current
IS
2.0
4.0 V
0.7 1.0 Ω
1600 1900 pF
160 270 pF
25 35 pF
96 120 ns
158 240 ns
370 400 ns
180 220 ns
56 60 nC
10
nC
17
nC
1.4 V
12 A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
48 A
Reverse Recovery Time
trr
VGS = 0 V, IS = 12A,
Reverse Recovery Charge
QRR
dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
380
ns
3.5
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-220.G
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