12N70G(2009) 데이터 시트보기 (PDF) - Unisonic Technologies
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12N70G Datasheet PDF : 6 Pages
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12N70
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VDSS
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
700
V
±30
V
12
A
12
A
48
A
790
mJ
24
mJ
4.5
V/ns
Power Dissipation
TO-220
TO-220F/TO-220F1
PD
225
°C/W
51
°C/W
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
UNIT
Junction to Ambient
Junction to Case
θJA
TO-220
TO-220F/TO-220F1
θJC
62.5
°C/W
0.56
°C/W
2.43
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
Drain-Source Leakage Current
IDSS
VDS = 700 V, VGS = 0 V
Gate-Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ ID = 250 μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 6.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS = 25 V, VGS = 0 V, f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
Turn-Off Delay Time
tR
tD(OFF)
VDD = 300V, ID = 12A, RG = 25Ω
(Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
VDS= 480V,ID= 12A, VGS= 10 V
(Note 1, 2)
QGD
MIN TYP MAX UNIT
700
V
10 μA
±100 nA
0.7
V/°C
2.0
4.0 V
0.87 1.0 Ω
1480 1900 pF
200 270 pF
25 35 pF
30 70 ns
115 240 ns
95 200 ns
85 180 ns
42 54 nC
8.6
nC
21
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-220.C
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