12N65 데이터 시트보기 (PDF) - Unisonic Technologies

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12N65

12A, 650V N-CHANNEL POWER MOSFET

Unisonic Technologies 

12N65

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

12

A

Drain Current

Continuous

ID

Pulsed (Note 2)

IDM

12

A

48

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

790

mJ

24

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220 / TO-262

Power Dissipation

TO-220F / TO-220F1

PD

225

W

51

W

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-55 ~ +150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220 / TO-262

TO-220F/TO-220F1

SYMBOL

θJA

θJC

RATING

62.5

0.56

2.43

UNIT

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-583.B

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