11E6 데이터 시트보기 (PDF) - Electronics Industry

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11E6

SILICON RECTIFIER DIODES

Electronics Industry 

11E1 - 11E6

PRV : 100 - 600 Volts

Io : 1.0 Ampere

FEATURES :

* High current capability

* High surge current capability

* High reliability

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

MECHANICAL DATA :

* Case : DO-41 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.339 gram

SILICON RECTIFIER DIODES

DO - 41

0.107 (2.7)

0.080 (2.0)

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

0.205 (5.2)

0.166 (4.2)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current Ta = 40°C

Maximum Peak Forward Surge Current

Maximum Forward Voltage at IF = 1.0 A

Maximum Reverse Current at VR = VRRM

Junction Temperature Range

Storage Temperature Range

SYMBOL

VRRM

VRMS

VDC

IF

IFSM

VF

IRM

TJ

TSTG

11E1 11E2 11E4 11E6

100

200

400

600

70

140

280

420

100

200

400

600

1.0

45

1.0

50

10

- 65 to + 175

- 65 to + 175

UNIT

V

V

V

A

A

V

µA

°C

°C

Page 1 of 2

Rev. 04 : October 3, 2005

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