HYB 314405BJ/BJL-50/-60/-70
3.3V 1M x 4 EDO - DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Input/output voltage ..................................................................................................... – 1 to + 4.6 V
Power Supply voltage .................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol Limit Values
min.
max.
Unit Test
Condition
Input high voltage
Input low voltage
TTL Output high voltage (IOUT = – 2 mA)
TTL Output low voltage (IOUT = 2 mA)
VIH
2.0
VCC + 0.5 V
1)
VIL
– 1.0 0.8
V
1)
VOH
2.4
–
V
1)
VOL
–
0.4
V
1)
CMOS Output high voltage (IOUT = – 100 µA) VOH
VCC – 0.2 –
V
CMOS Output low voltage (IOUT = 100 µA)
VOL
Input leakage current, any input
II(L)
(0 V < Vin < VCC + 0.3 V, all other input = 0 V)
–
0.2
– 10
10
V
µA 1)
Output leakage current, any input
II(L)
(DO is disabled, 0 V < VOUT < VCC + 0.3 V)
– 10
10
Average VCC supply current
-50 version
ICC1
–
70
-60 version
–
60
-70 version
–
55
µA
mA 2) 3)4)
Standby VCC supply current
(RAS = CAS = WE = VIH)
ICC2
–
Average VCC supply current during RAS-only ICC3
refresh cycles
-50 version
–
-60 version
–
-70 version
–
Average VCC supply current during hyper page ICC4
mode (EDO) operation
-50 version
–
-60 version
–
-70 version
–
2
mA –
mA 2)4)
70
60
55
mA 2) 3)4)
70
60
55
Semiconductor Group
5