BR9010F 데이터 시트보기 (PDF) - ROHM Semiconductor

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BR9010F

1, 2, and 4k bit EEPROMs for direct connection to serial ports

ROHM Semiconductor 

Memory ICs

BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /

BR9040 / BR9040F

•Electrical characteristics

BR9010 / F / FV: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)

Parameter

Input low level voltage 1

Input high level voltage 1

Input low level voltage 2

Input high level voltage 2

Output low level voltage

Output high level voltage

Input leak current

Output leak current

Consumption current

during operation

Standby current

SK frequency

Symbol

VIL1

VIH1

VIL2

VIH2

VOL

VOH

ILI

ILO

ICC1

ICC2

ISB

fSK

Min. Typ.

—

—

0.7 × —

VCC

—

—

0.8 × —

VCC

0

—

VCC –

—

0.4

–1

—

–1

—

—

—

—

—

—

—

—

—

Max. Unit

0.3 × V

VCC

—

V

0.2 × V

VCC

—

V

0.4

V

VCC

V

1

µA

1

µA

2

mA

1

mA

3

µA

1

MHz

DI Pin

Conditions

DI Pin

CS, SK, WC Pin

CS, SK, WC Pin

IOL = 2.1mA

IOH = – 0.4mA

VIN = 0V ~ VCC

VOUT = 0V ~ VCC CS = VCC

f = 1MHz tE / W = 10ms (WRITE)

f = 1MHz (READ)

CS, SK, DI, WC, = VCC DO = OPEN

—

BR9010 / F / FV: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)

Parameter

Input low level voltage 1

Symbol

VIL1

Input high level voltage 1

VIH1

Input low level voltage 2

VIL2

Input high level voltage 2

VIH2

Output low level voltage

VOL

Output high level voltage

VOH

Input leak current

ILI

Output leak current

ILO

Consumption current

ICC1

during operation

ICC2

Standby current

ISB

SK frequency

fSK

᭺ Not designed for radiation resistance

4

Min. Typ.

—

—

0.7 × —

VCC

—

—

0.8 × —

VCC

0

—

VCC –

—

0.4

–1

—

–1

—

—

—

—

—

—

—

—

—

Max. Unit

0.3 × V DI Pin

VCC

—

V DI Pin

Conditions

0.2 × V CS, SK, WC Pin

VCC

—

V CS, SK, WC Pin

0.4

V

IOL = 100µA

VCC

V

IOH = – 100µA

1

µA

VIN = 0 ~ VCC

1

µA

VOUT = 0 ~ VCC CS = VCC

1.5

mA f = 1MHz tE / W = 15ms (WRITE)

500

µA f = 1MHz (READ)

2

µA CS, SK, DI, WC, = VCC DO = OPEN

1

MHz

—

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