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FDPF51N25RDTU 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDPF51N25RDTU
Fairchild
Fairchild Semiconductor Fairchild
FDPF51N25RDTU Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
102 Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
* Notes :
1. 250μs Pulse Test
2. TC = 25oC
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
102
150oC
101
25oC
-55oC
100
2
* Notes :
1. VDS = 40V
2. 250μs Pulse Test
4
6
8
10
12
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.14
0.12
0.10
0.08
0.06
0.04
0
VGS = 10V
VGS = 20V
* Note : TJ = 25oC
25
50
75
100
125
150
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
6000
4000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
0
10-1
* Note ;
Crss
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
102
101
100
0.2
150oC
25oC
* Notes :
1. VGS = 0V
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 50V
VDS = 125V
8
VDS = 200V
6
4
2
* Note : ID = 51A
0
0
10
20
30
40
50
60
QG, Total Gate Charge [nC]
©2008 Fairchild Semiconductor Corporation
3
FDP51N25 / FDPF51N25 Rev. 1.8
www.fairchildsemi.com

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