TGA1073G-SCC 데이터 시트보기 (PDF) - TriQuint Semiconductor
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TGA1073G-SCC Datasheet PDF : 8 Pages
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TGA1073G-SCC
19 to 27 GHz Medium Power Amplifier
RF Electrical Specifications
Test conditions unless otherwise noted: TA = 25°C, Nominal, VD = 6 V, ID = 220 mA.
Test
Conditions
Small-Signal Gain Magnitude (1)
19 GHz
20 to 25 GHz
Min
16
19
Typ Max Units
20
23
dB
Power Output at 1 dB Gain Compression
20 GHz
22 GHz
23.5 GHz
21
23
24
25
24
26
dBm
Input Return Loss Magnitude (1)
Output Return Loss Magnitude (1)
Output Third Order Intercept (2)
19 to 25 GHz
19 to 25 GHz
−20
dB
−15
dB
32
dBm
Notes:
1. RF probe data is taken at 1 GHz steps.
2. Minimum output third-order-intercept (OTOI) is generally 6 dB minimum above the 1 dB compression point (P1dB).
Calculations are based on standard two-tone testing with each tone approximately 10 dB below the nominal P1dB. Factors
that may affect OTOI performance include device bias, measurement frequency, operating temperature, output interface, and
output power level for each tone.
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance (θJC) (1)
71.7°C/W
Channel Temperature (TCH)
VD = 6 V, ID = 220 mA, PDISS = 1.32 W
149.6°C
Median Lifetime (TM)
1.0 x 10^6 Hours
Notes:
1. Measured from channel to chip backside.
2. Assumes eutectic attach using 1.5 mil thick 80/20 AuSn mounted to a 20 mil CuMo Carrier at 55°C baseplate temperature.
Worst case condition with no RF applied, 100% of DC power is dissipated.
Median Lifetime
Median Lifetime vs. Channel Temperature
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04 FET3
25
50
75 100 125 150 175 200
Channel Temperature, TCH (°C)
Datasheet: Rev A 02-24-15
© 2013 TriQuint
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Disclaimer: Subject to change without notice
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