30F122 데이터 시트보기 (PDF) - Toshiba

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30F122

IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel

Toshiba 

Part Number : 30F122, GT30F122

Function : IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel

Package : TO-220SIS Type

Manufacturers : Toshiba

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The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter

and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply

(UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

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