2SA872 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SA872 Datasheet PDF : 7 Pages
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2SA872, 2SA872A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA872
2SA872A
Unit
–90
–120
V
–90
–120
V
–5
–5
V
–50
–50
mA
300
300
mW
150
150
°C
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA872
Item
Symbol Min Typ
Collector to emitter
breakdown voltage
V(BR)CEO –90 —
Collector cutoff current ICBO
——
——
DC current tarnsfer ratio hFE1*1 250 —
2SA872A
Max Min Typ
— –120 —
–0.5 — —
—— —
800 250 —
hFE2
160 — — 160 —
Base to emitter voltage VBE
— — –0.75 — —
Collector to emitter
saturation voltage
VCE(sat)
—
—
–0.5 —
—
Gain bandwidth product fT
— 120 — — 120
Collector output
capacitance
Noise figure
Cob
— 1.8 — — 1.8
NF
— — 5.0 — —
— — 1.5 — —
Note: 1. The 2SA872/A is grouped by hFE1 as follows.
D
E
250 to 500 400 to 800
Max Unit Test conditions
—V
IC = –1 mA, RBE = ∞
— µA
–0.5 µA
800
—
–0.75 V
–0.5 V
— MHz
— pF
VCB = –75 V, IE = 0
VCE = –100 V, IE = 0
VCE = –12 V,
IC = –2 mA
VCE = –12 V,
IC = –0.1 mA
VCE = –12 V,
IC = –2 mA
IC = –10 mA,
IB = –1 mA
VCE = –12 V,
IC = –2 mA
VCB = –25 V, IE = 0,
f = 1 MHz
5.0 dB
1.5 dB
VCE = –6 V, f = 10 Hz
IC = –50 µA
Rg = 50 kΩ
f = 1 kHz
2
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