K1588 데이터 시트보기 (PDF) - Renesas Electronics

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K1588

MOS FIELD EFFECT TRANSISTOR

Renesas Electronics 

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 16 V, VGS = 0 V

Gate Leakage Current

IGSS

VGS = ±16 V, VDS = 0 V

Gate Cut-off Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

VGS(off)

| yfs |

RDS(on)1

VDS = 5.0 V, ID = 1.0 mA

VDS = 3.0 V, ID = 1.0 A

VGS = 2.5 V, ID = 1.0 A

RDS(on)2 VGS = 4.0 V, ID = 1.5 A

Input Capacitance

Ciss

VDS = 3.0 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 3.0 V, ID = 1.5 A

Rise Time

tr

VGS = 3 V

Turn-off Delay Time

td(off)

RG = 10 Ω

Fall Time

tf

Note Pulsed

TEST CIRCUIT SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 μs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

0 10%

VGS

90%

ID

90%

ID

Wave Form

0 10%

td(on)

ID

tr td(off)

90%

10%

tf

ton

toff

2SK1588

MIN.

0.8

0.4

TYP.

1.0

3.0

0.25

0.17

240

250

60

140

650

120

160

MAX.

1.0

±5.0

1.6

0.5

0.3

UNIT

μA

μA

V

S

Ω

Ω

pF

pF

pF

ns

ns

ns

ns

2

Data Sheet D17810EJ3V0DS

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