2SA844 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SA844 Datasheet PDF : 5 Pages
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2SA844
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Ratings
Unit
–55
V
–55
V
–5
V
–100
mA
100
mA
300
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO –55 —
voltage
Collector to emitter breakdown V(BR)CEO –55 —
voltage
Emitter to base breakdown
V(BR)EBO
–5
—
voltage
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
—
DC current transfer ratio
hFE*1
160 —
Collector to emitter saturation VCE(sat)
—
voltage
–0.1
Base to emitter voltage
VBE
—
–0.66
Gain bandwidth product
fT
—
200
Collector output capacitance Cob
—
2.0
Note: 1. The 2SA844 is grouped by hFE as follows.
C
D
E
160 to 320 250 to 500 400 to 800
Max
—
—
—
–100
–50
800
–0.5
–0.75
—
—
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE = ∞
IE = –10 µA, IC = 0
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
VCE = –12 V, IC = –2 mA
VCE = –12 V, IE = –2 mA
VCB = –10 V, IE = 0, f = 1 MHz
See characteristic curves of 2SA836.
2
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