2SA1082 데이터 시트보기 (PDF) - Renesas Electronics
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2SA1082 Datasheet PDF : 6 Pages
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2SA1025, 2SA1081, 2SA1082
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
2SA1025
2SA1081
2SA1082
Unit
–60
–90
–120
V
–60
–90
–120
V
–5
–5
–5
V
–100
–100
–100
mA
100
100
100
mA
400
400
400
mW
150
150
150
°C
–55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1025
2SA1081
2SA1082
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO –60 — —
–90 — —
–120 — —
V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
V(BR)CEO –60 — —
V(BR)EBO –5
—
—
–90 — —
–5 — —
–120 — —
–5 — —
V IC = –1 mA,
RBE = ∞
µA IE = –10 µA, IC = 0
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE*1
— — –0.1 — — –0.1 — — –0.1
— — –0.1 — — –0.1 — — –0.1
250 — 800 250 — 800 250 — 800
Collector to emitter
saturation voltage
VCE(sat) —
Base to emitter voltage VBE
—
— –0.2 —
–0.6 — —
— –0.2 —
–0.6 — —
— –0.2
–0.6 —
Gain bandwidth product fT
— 90 — — 90 — — 90 —
Collector output
capacitance
Cob — 3.5 — — 3.5 — — 3.5 —
Note: 1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by hFE as follows.
D
E
µA VCB = –50 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V,
IC = –2 mA
V IC = –10 mA,
IB = –1 mA
V VCE = –12 V,
IC = –2 mA
MHz VCE = –12 V,
IC = –2 mA
pF VCB = –10 V, IE = 0,
f = 1 MHz
250 to 500 400 to 800
See characteristic curves of 2SA1083.
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