2SD468 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD468

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD468

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

iC(peak)

PC

Tj

Tstg

Ratings

Unit

25

V

20

V

5

V

1.0

A

1.5

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 25

—

voltage

Collector to emitter breakdown V(BR)CEO 20

—

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE*1

85

—

Collector to emitter saturation VCE(sat)

—

0.2

voltage

Base to emitter voltage

VBE

—

0.79

Gain bandwidth product

fT

—

190

Collector output capacitance Cob

—

22

Notes: 1. The 2SD468 is grouped by hFE as follows.

2. Pulse test

B

C

85 to170

120 to 240

Max

—

—

—

1.0

240

0.5

1.0

—

—

Unit

V

V

V

µA

V

V

MHz

pF

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 2 V, IC = 0.5 A*2

IC = 0.8 A, IB = 0.08 A*2

VCE = 2 V, IC = 0.5 A*2

VCE = 2 V, IC = 0.5 A*2

VCB = 10 V, IE = 0, f = 1 MHz

2

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