2SD1101 데이터 시트보기 (PDF) - Renesas Electronics

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2SD1101

Silicon NPN Epitaxial

Renesas Electronics 

2SD1101

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

25

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

20

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

5

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICBO

—

—

1.0

µA VCB = 20 V, IE = 0

DC current transfer ratio

hFE

120

—

240

VCE = 1 V, IC = 0.15 A

Collector to emitter saturation voltage

VCE(sat)

—

—

0.5

V IC = 0.5 A, IB = 0.05 A

Base to emitter voltage

VBE

—

—

1.0

V VCE = 1 V, IC = 0.15 A

Rev.2.00 Aug 10, 2005 page 2 of 5

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