SKW07N120 데이터 시트보기 (PDF) - Infineon Technologies

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SKW07N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW07N120

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tF

trr

tS

tF

Qrr

Irrm

dirr/dt

Tj=25°C,

VCC=800V,IC=8A,

VGE=15V/0V,

RG=47Ω,

Lσ1)=180nH,

Cσ1)=40pF

Energy losses include

“tail” and diode

reverse recovery.

Tj=25°C,

VR=800V, IF=8A,

diF/dt=400A/µs

min.

-

-

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

27

29

440

21

0.6

0.4

1.0

60

0.3

9

400

Unit

max.

35 ns

38

570

27

0.8 mJ

0.55

1.35

ns

µC

A

A/µs

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

min.

Value

typ.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

Tj=150°C

-

30

tr

VCC=800V,

-

26

td(off)

IC=8A,

-

490

tf

VGE=15V/0V,

-

30

Eon

Eoff

RG=47Ω,

Lσ1)=180nH,

Cσ1)=40pF

-

1.0

-

0.7

Ets

Energy losses include

-

1.7

“tail” and diode

reverse recovery.

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

Tj=150°C

-

170

tS

VR=800V, IF=8A,

-

tF

diF/dt=500A/µs

-

Diode reverse recovery charge

Qrr

-

1.1

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during tF

Irrm

dirr/dt

-

15

-

110

1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Unit

max.

36 ns

31

590

36

1.2 mJ

0.9

2.1

ns

µC

A

A/µs

Power Semiconductors

3

Jul-02

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