2SA893A 데이터 시트보기 (PDF) - Renesas Electronics

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2SA893A

Silicon PNP Epitaxial

Renesas Electronics 

2SA893A

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown voltage

Collector cutoff current

DC current transfer ratio

Base to emitter voltage

Collector to emitter saturation voltage

Gain bandwidth product

Collector output capacitance

V(BR)CEO

ICBO

hFE*1

VBE

VCE(sat)

fT

Cob

–120

—

—

250

—

—

—

—

—

—

—

—

—

–0.5

—

800

—

–0.75

—

–0.5

120

—

1.8

—

V

µA

µA

V

V

MHz

pF

IC = –1 mA, RBE = ∞

VCB = –75 V, IE = 0

VCB = –100 V, IE = 0

VCE = –12 V,

IC = –2 mA

VCE = –12 V,

IC = –2 mA

IC = –10 mA,

IB = –1 mA

VCE = –12 V,

IC = –2 mA

VCB = –25 V, IE = 0,

f = 1 MHz

Noise figure

NF

—

2

10

dB VCE = –6 V,

IC = –50 µA

Rg = 50 kΩ, f = 1 kHz

Note: 1. The 2SA893A is grouped by hFE as follows.

D

E

250 to 500 400 to 800

Rev.2.00 Aug 10, 2005 page 2 of 4

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