2SA1029 데이터 시트보기 (PDF) - Renesas Electronics

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2SA1029

Silicon PNP Epitaxial

Renesas Electronics 

2SA1029, 2SA1030

Electrical Characteristics

Item

Collector to base

breakdown voltage

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current trnsfer ratio

Symbol

V(BR)CBO

2SA1029

Min Typ Max

–30 —

—

2SA1030

Min Typ Max

–55 —

—

V(BR)CEO –30

—

— –50 —

—

V(BR)EBO

–5

—

—

–5

—

—

ICBO

—

— –0.5 —

— –0.5

IEBO

—

— –0.5 —

— –0.5

hFE*1

100

—

500 100

—

320

Base to emitter voltage

VBE

—

— –0.8 —

— –0.8

Collector to emitter

saturation voltage

VCE(sat)

—

— –0.2 —

— –0.2

Gain bandwidth product

fT

200 280 — 200 280 —

Collector output

Cob

—

3.3

4.0

—

3.3

4.0

capacitance

Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows.

B

C

D

2SA1029 100 to 200 160 to 320 250 to 500

2SA1030 100 to 200 160 to 320 —

(Ta = 25°C)

Unit

Test conditions

V IC = –10 µA, IE = 0

V IC = –1 mA, RBE = ∞

V IE = –10 µA, IC = 0

µA

µA

V

V

MHz

pF

VCB = –18 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V,

IC = –2 mA

VCE = –12 V,

IC = –2 mA

IC = –10 mA,

IB = –1 mA

VCB = –12 V,

IC = –2 mA

VCB = –10 V, IE = 0,

f = 1 MHz

Rev.3.00 Aug 10, 2005 page 2 of 5

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