1000
Ciss
Coss
Crss
100
10
IKA08N65H5
Highspeedswitchingseriesfifthgeneration
D=0.5
1
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
1
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
i:
1
2
3
4
5
6
ri[K/W]: 0.5538076 0.8276154 0.4749528 0.4651059 1.652781 0.8257374
τi[s]: 1.7E-4
1.1E-3
8.6E-3
0.0926713 1.371172 7.214481
0.01
1E-5 1E-4 0.001 0.01 0.1 1
10 100
tp,PULSEWIDTH[s]
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
70
Tj=25°C, IF = 4A
65
Tj=150°C, IF = 4A
1
D=0.5
60
0.2
55
0.1
0.05
50
0.02
0.1
0.01
45
single pulse
40
35
0.01
30
i:
1
2
3
4
5
6
ri[K/W]: 0.9520941 1.171948 0.5287944 0.4647577 1.671981 0.8104246
τi[s]: 2.1E-4
1.1E-3 8.9E-3
0.09325149 1.367755 7.182978
0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 10 100
tp,PULSEWIDTH[s]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
25
20
600 700 800 900 1000 1100 1200 1300 1400 1500 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.1.1,2012-11-09