IKP40N65F5(2012) 데이터 시트보기 (PDF) - Infineon Technologies

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IKP40N65F5
(Rev.:2012)

650V DuoPack IGBT and Diode High speed switching series fifth generation

Infineon Technologies 

IKW40N65F5,IKP40N65F5

Highspeedswitchingseriesfifthgeneration

1E+4

1000

Ciss

Coss

Crss

100

10

1

D=0.5

0.2

0.1

0.1

0.05

0.02

0.01

single pulse

0.01

1

0

5

10

15

20

25

30

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 17. Typicalcapacitanceasafunctionof

collector-emittervoltage

(VGE=0V,f=1MHz)

0.001

1E-6

i:

1

2

3

4

ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708

τi[s]: 7.3E-5

7.0E-4 0.01235548 0.08020881

1E-5 1E-4 0.001 0.01 0.1

1

tp,PULSEWIDTH[s]

Figure 18. IGBTtransientthermalresistance

(D=tp/T)

130

Tj=25°C, IF = 20A

1

Tj=150°C, IF = 20A

120

D=0.5

110

0.2

0.1

100

0.1

0.05

0.02

90

0.01

single pulse

80

70

0.01

60

0.001

1E-7

1E-6

i:

1

2

3

ri[K/W]: 0.6701584 0.775759 0.3540826

τi[s]: 3.4E-4

4.7E-3 0.04680901

1E-5 1E-4 0.001 0.01 0.1 1

tp,PULSEWIDTH[s]

Figure 19. Diodetransientthermalimpedanceasa

functionofpulsewidth

(D=tp/T)

50

40

500

700

900

1100 1300 1500

diF/dt,DIODECURRENTSLOPE[A/µs]

Figure 20. Typicalreverserecoverytimeasafunction

ofdiodecurrentslope

(VR=400V)

12

Rev.1.1,2012-11-09

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