IKW40N65F5(2012) 데이터 시트보기 (PDF) - Infineon Technologies
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IKW40N65F5
(Rev.:2012)
(Rev.:2012)
Infineon Technologies
IKW40N65F5 Datasheet PDF : 18 Pages
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1000
td(off)
tf
td(on)
tr
100
IKW40N65F5,IKP40N65F5
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
100
10
10
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=20A,Dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=20A,rG=15Ω,Dynamictestcircuitin
Figure E)
5.5
typ.
min.
5.0
max.
8
Eoff
Eon
7
Ets
4.5
6
4.0
5
3.5
4
3.0
3
2.5
2
2.0
1.5
1
1.0
0
25
50
75
100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
0
0
20
40
60
80
100 120
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.4mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=15Ω,Dynamictestcircuitin
Figure E)
10
Rev.1.1,2012-11-09
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