K75T60(2006) 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

일치하는 목록

K75T60
(Rev.:2006)

Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

Infineon Technologies 

TrenchStop Series

IKW75N60T

q

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

C

• Very low VCE(sat) 1.5 V (typ.)

• Maximum Junction Temperature 175 °C

• Short circuit withstand time – 5µs

• Positive temperature coefficient in VCE(sat)

• very tight parameter distribution

• high ruggedness, temperature stable behaviour

• very high switching speed

• Low EMI

• Very soft, fast recovery anti-parallel EmCon HE diode

• Qualified according to JEDEC1) for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

G

E

PG-TO-247-3-21

Applications:

• Frequency Converters

• Uninterrupted Power Supply

Type

VCE

IC

VCE(sat),Tj=25°C Tj,max

Marking

Package

IKW75N60T 600V 75A

1.5V

175°C K75T60 PG-TO-247-3-21

Maximum Ratings

Parameter

Symbol

Value

Collector-emitter voltage

DC collector current, limited by Tjmax

TC = 25°C

TC = 100°C

Pulsed collector current, tp limited by Tjmax

Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C)

Diode forward current, limited by Tjmax

TC = 25°C

TC = 100°C

Diode pulsed current, tp limited by Tjmax

Gate-emitter voltage

Short circuit withstand time3)

VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C

Power dissipation TC = 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

VCE

IC

ICpuls

-

IF

IFpuls

VGE

tSC

Ptot

Tj

Tstg

-

600

802)

75

225

225

802)

75

225

±20

5

428

-40...+175

-55...+175

260

Unit

V

A

V

µs

W

°C

1) J-STD-020 and JESD-022

2) Value limited by bondwire

3) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

1

Rev. 2.4 May 06

Share Link: