PJD669A 데이터 시트보기 (PDF) - Promax Johnton

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PJD669A

NPN Epitaxial Silicon Transistors

Promax Johnton 

PJD669A

NPN Epitaxial Silicon Transistors

• Complementary pair with PJB649A

• *Value at Tc = 25℃

ABSOLUTE MAXIMUM RATINGS (TA = 25℃)

T O-126

Rating

Collector to base voltage

Collector to emitter

voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

Ic

Ic(peak)

Pc

Pc*

Tj

T stg

PJD669A

180

160

5

1.5

3

1

20

150

-55 to +150

Unit

V

V

V

A

A

W

W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

Pin : 1. Emitter

2. Collector

3. Base

ORDERING INFORMATION

Device

PJD669ACK

Operating Temperature

-20℃～+85℃

Package

T O-126

Characteristics

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cutoff current

DC Current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Gain bandwidth product

Collector output capacitance

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

hFE1*

hFE2

VCE (sat)

VBE

fT

COb

*The PJD669A are grouped by hFE1 as follows.

**Pulse Test

Tes Condition

IC = -1mA, IE = 0

IC = -10mA, RBE =∞

IE = -1mA, IC = 0

VCB = -160V,IE =0

VCE = -5V,IC = -150mA

VCE = -5V,IC = -500mA**

IC = -500mA,IB = -50mA

VCE = -5V, IB = -150mA

VCE = -5V, IC = -150mA

VCB= -10V, IE = 0,

f = 1MHz

PJD669A

Min Typ Max

180

--

--

160

--

--

5

--

--

--

--

10

60

--

200

30

--

--

--

--

1

--

--

1.5

--

140

--

--

27

--

Unit

V

V

V

µA

V

V

MHz

pF

MAXIMUM COLLECTOR DISSIPATION

CURVE

Classification

B

C

D

hFE(1)

60 to 120

100 to

200

--

1-3

2002/01.rev.A

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